high thermal conductivity AIN Aluminum Nitride Ceramic plate
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Aluninum Nitride Ceramic:
The space group of this structure of aluminum nitride ceramic is P63mc. Industrial grade materials can only be manufactured by hot pressing and welding. The substance is very stable in an inert high temperature environment. In the air, when the temperature is higher than 700℃, the surface of the material will be oxidized. At room temperature, 5-10 nanometer thick oxide films can still be detected on the surface of the material. Up to 1370°C, the oxide film can still protect the substance. But when the temperature is higher than 1370℃, a lot of oxidation will occur. Up to 980°C, aluminum nitride is still quite stable in hydrogen and carbon dioxide. Mineral acids slowly dissolve by attacking the boundaries of granular substances, while strong alkalis dissolve them by attacking granular aluminum nitride. The substance will slowly hydrolyze in water. Aluminum nitride can resist the attack of most molten salts, including chloride and cryolite (ie sodium hexafluoroaluminate). There are reports that most of the current research is developing a semiconductor (gallium nitride or alloy aluminum gallium nitride) based light-emitting diode that operates in ultraviolet light, and the wavelength of light is 250 nanometers. In May 2006, it was reported that an inefficient diode can emit light waves with a wavelength of 210 nanometers [1]. Measured by vacuum ultraviolet reflectance, a single aluminum nitride crystal has an energy gap of 6.2 eV. In theory, the energy gap allows some waves with a wavelength of about 200 nanometers to pass. However, many difficulties need to be overcome when it is implemented commercially. Aluminum nitride is used in optoelectronic engineering, including as dielectric layer in optical storage interface and electronic substrate, as chip carrier with high thermal conductivity, and for military use.
Due to the characteristics of the piezoelectric effect of aluminum nitride, the epitaxial stretching of aluminum nitride crystals is also used in surface acoustic wave detectors. The detector will be placed on the silicon wafer. There are only very few places where these thin films can be reliably manufactured.
The use of aluminum nitride ceramics has high room temperature and high temperature strength, small expansion coefficient, and good thermal conductivity. It can be used as a heat exchanger material for high-temperature structural parts.
Using aluminum nitride ceramics can withstand the corrosion properties of iron, aluminum and other metals and alloys, it can be used as a crucible and casting mold material for melting metals such as Al, Cu, Ag, and Pb.
Aluminum nitride has high hardness and exceeds traditional alumina. It is a new type of wear-resistant ceramic material, but it can only be used for severely worn parts due to its high cost.
Using AIN ceramics for heat resistance, melt erosion and thermal shock resistance, GaAs crystal crucible, Al evaporating dish, magnetic fluid power generation device and high temperature turbine corrosion resistant parts can be fabricated, and its optical properties can be used as an infrared window. The aluminum nitride film can be made into a high frequency piezoelectric element, a very large scale integrated circuit substrate, or the like.
Aluminum nitride heat-resistant, resistant to molten metal erosion, stable to acid, but easy to be eroded in alkaline solution. The AIN fresh surface is exposed to moist air and reacts to form a very thin oxide film. By utilizing this property, it can be used as a crucible and a die-casting mold material for smelting metals such as aluminum, copper, silver, and lead. AIN ceramics have good metallization properties and can be widely used in the electronics industry as an alternative to toxic cerium oxide.
Data Sheet:
Ø (1) high thermal conductivity (about 320W / m · K), close to BeO and SiC, more than 5 times that of Al2O3;
Ø(2) The thermal expansion coefficient (4.5×10-6°C) is matched with Si (3.5-4×10-6°C) and GaAs (6×10-6°C);
Ø (3) excellent electrical properties (dielectric constant, dielectric loss, volume resistivity, dielectric strength);
Ø(4) good mechanical properties, higher flexural strength than Al2O3 and BeO ceramics, can be sintered at normal pressure;
Ø (5) good optical transmission characteristics;
Ø(6) non-toxic;
Application industry:
Aluminum nitride powder has high purity, small particle size and high activity, and is the main raw material for manufacturing high thermal conductivity aluminum nitride ceramic substrate.
Aluminum nitride ceramic substrate, high thermal conductivity, low expansion coefficient, high strength, high temperature resistance, chemical corrosion resistance, high resistivity, small dielectric loss, is an ideal large-scale integrated circuit heat sink substrate and packaging materials.
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