can also be applied to solar cells. After the silicon nitride film is plated by PECVD, not only can it be used as an anti-reflection film to reduce the reflection of incident light, but also, in the deposition process of the silicon nitride film, hydrogen atoms of the reaction product enter the silicon nitride film and the silicon wafer. It acts as a passivation defect. Here, the silicon nitride nitrogen atomic number ratio is not strictly 4:3, but varies within a certain range depending on the process conditions, and the physical properties of the film corresponding to different atomic ratios are different.
For ultra-high temperature gas turbines, aircraft engines, electric furnaces, etc.